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Detail


IGBT模块

Voltage level

Part Number

VCES(V)

IC(A)

VCE(sat)(V)@Tvj=25℃

VGEth(V)

Circuit diagram

Package

Typ.

Max.

Typ.

Max.

电压等级

产品型号

集电极-发射极电压

集电极电流

集电极-发射极饱和电压典型值

集电极-发射极饱和电压最大值

栅极-发射极阈值电压典型值

栅极-发射极阈值电压最大值

电路拓扑

封装形式

1200V

GMM45N12KBLMTN41

1200

450

1.75 

2.10 

5.90 

-

Half Bridge

E6

GMM45N12NUSTN51

1200

450

1.90 

-

5.80 

-

3-Level NPC

A3

GMM60N12KBLMTN41

1200

600

1.75 

2.15 

5.80 

6.40 

Half Bridge

E6

1700V

GMM45N17KBLMTN41

1700

450

1.80 

2.20 

5.90 

6.40 

Half Bridge

E6

GMM60N17KBLMTN41

1700

600

1.80 

2.20 

6.00 

6.50 

Half Bridge

E6

3300V

GMM100N33LSSMEN11

3300

1000

2.45 

2.95 

6.80 

7.80 

Single

H1

GMM150N33MSSMEN21

3300

1500

2.45 

2.95 

6.80 

7.80 

Single

H2


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